Selective-process-based silicon nanowires batch fabrication technique and its surface biomolecule assembly with the sensor applications
نویسندگان
چکیده
منابع مشابه
Silicon Nanowires: Fabrication and Applications
Due to the high surface to volume silicon ratio and unique quasi onedimensional electronic structure, silicon nanowire based devices have properties that can outperform their traditional counterparts in many ways. To fabricate silicon nanowires, in principle there are a variety of different approaches. These can be classified into top-down and bottom-up methods. The choice of fabrication method...
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Pentagon-shaped silicon wires with linewidth around 300 nm are successfully fabricated by using the Si/SiGe epitaxy technique, reactive ion etching, and subsequent selective chemical etching. The nanowires are oxidized in wet O2 at 750 ◦C and 850 ◦C. The oxide and interface morphology are characterized by cross-sectional scanning electron microscope images. It is found that the oxidized nanowir...
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The reason behind the majority of difficulties encountered in the integration of nanoscale objects with microelectromechanical systems can almost always be traced back to the lack of batch-compatible fabrication techniques at the nanoscale. On the one hand, self-assembly products do not allow a high level of control on their orientation and numbers, and hence, their attachment to a micro device...
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The successful synthesis of carbon nanotubes has stimulated much research in nanomaterials, in particular, in semiconducting nanostructures, which are interesting for their novel sizeand dimensionality-dependent physical properties, and their potential applications in nanoscale optoelectronics. Silicon is the most important semiconducting material, with its contemporary microelectronic technolo...
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In this letter, we report a novel approach to selectively functionalize the surface of silicon nanowires located on silicon-based substrates. This method is based upon highly localized nanoscale Joule heating along silicon nanowires under an applied electrical bias. Numerical simulation shows that a high-temperature (>800 K) with a large thermal gradient can be achieved by applying an appropria...
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ژورنال
عنوان ژورنال: SCIENTIA SINICA Technologica
سال: 2015
ISSN: 1674-7259
DOI: 10.1360/n092014-00198